Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO2 Hybrid Bonding

Autor:	Chukwudi Okoro, Joseph J. Kopanski, Jungjoon Ahn, Lin You, Yaw S. Obeng
Rok vydání:	2015
Předmět:	Insolation Engineering Through-silicon via business.industry Three-dimensional integrated circuit Dielectric Integrated circuit computer.software_genre Metrology law.invention Reliability (semiconductor) law Optoelectronics Spectroscopic detection Data mining business computer
Zdroj:	ECS Transactions. 69:79-88
ISSN:	1938-6737 1938-5862
Popis:	This work develops a combined surface-activated bonding (SAB) technique for low-temperature SiO2-SiO2 and Cu-Cu bonding at 200 °C. The combined SAB technique involves combinations of surface activation by using surface bombardment by neutralized Ar ion beam containing Si atoms, water vapor exposure, and prebonding attach/detach prior to wafer bonding in vacuum. Bonding strength close to Si bulk fracture energy was achieved for both SiO2-SiO2 and Cu-Cu bonding pairs. We suggest the enhanced –OH (both Si–OH and Cu–OH) chemisorption on the wafers and pre-bonding removal of excess H2O from the interface/surfaces are the key factors involved in the present low-temperature bonding technique. This technique is promising for 3D integration through Cu/SiO2 hybrid bonding at no more than 200 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b44d5ff6bb5531e9c717104559f7cdb5 https://doi.org/10.1149/06906.0079ecst Zobrazit plný text záznamu