Crystallinity control of SiC grown on Si by sputtering method
| Autor: | Ryosuke Watanabe, Yoshiyuki Suda, Takahiro Tsukamoto, Koichi Kamisako |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Energy conversion efficiency Nanotechnology Crystal growth 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Inorganic Chemistry Crystallinity law Sputtering 0103 physical sciences Solar cell Materials Chemistry Composite material 0210 nano-technology Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 463:67-71 |
| ISSN: | 0022-0248 |
| Popis: | We investigated a method of controlling the crystallinity of an n-type SiC (n-SiC) layer grown on a p-type 4°-off-axis Si(1 1 1) (p-Si) substrate by our sputtering method for use as SiC/Si devices. An n-SiC layer grown on p-Si at 810 °C exhibits columnar 3C-SiC(1 1 1) crystal growth. However, it contains many defects near the n-SiC/p-Si interface. We then propose a method in which a 10-nm-thick nondoped SiC (i-SiC) interlayer is grown at a low temperature of 640 °C prior to the growth of the n-SiC layer at 810 °C, which results in a decrease in the number of defects at the SiC/p-Si interface and an intensive increase in the crystallinity of the n-SiC, compared with that of n-SiC grown at 810 °C without the interlayer, probably via effective interlayer reconstruction and an enhancement in the crystallinity of the i-SiC interlayer itself during the n-SiC growth. Furthermore, the n-SiC/i-SiC-interlayer/p-Si structure was applied as a Si-based solar cell and the energy conversion efficiency of the n-SiC/p-Si solar cell effectively increased with the insertion of the i-SiC interlayer. |
| Databáze: | OpenAIRE |
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