Observation of Ellipsometric Oscillations when Depositing SiOx Film on Si(100) Substrate Using an Electron Beam Deposition Method

Autor:	Mamoru Hisamitsu, Yoshifumi Yoshioka, Fumihiko Ohtani, Tamio Yoshida, Toyoyuki Hashimoto
Rok vydání:	1997
Předmět:	Materials science Reflection high-energy electron diffraction business.industry Oscillation General Engineering Analytical chemistry General Physics and Astronomy Substrate (electronics) Reflection (mathematics) Electron diffraction Ellipsometry Surface roughness Optoelectronics Thin film business
Zdroj:	Japanese Journal of Applied Physics. 36:L831
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.36.l831
Popis:	We have observed ellipsometric oscillations when depositing SiO x film on Si(100) substrate using an electron beam deposition method. A period of these oscillations is calculated to be 5.3 Å thick. From an investigation using a rough surface model in ellipsometry, it is considered that this SiO x film is deposited layer-by-layer. This ellipsometry oscillation, first reported in this letter, is applicable to noncrystalline films in which reflection high-energy electron diffraction (RHEED) oscillations are ineffective.
Databáze:	OpenAIRE
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