Autor: |
Deborah L. Schlagel, Vitalij K. Pecharsky, Min Zou, T.A. Lograsso, Karl A. Gschneidner |
Rok vydání: |
2009 |
Předmět: |
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Zdroj: |
Journal of Alloys and Compounds. 488:550-553 |
ISSN: |
0925-8388 |
DOI: |
10.1016/j.jallcom.2008.09.032 |
Popis: |
The spontaneous generation of voltage (SGV) in single crystalline Tb 5 Si 2.2 Ge 1.8 and Gd has been studied. Temperature-induced SGVs were observed along the three principal crystallographic axes of Tb 5 Si 2.2 Ge 1.8 , but not in Gd. Field-induced SGVs were observed with magnetic fields less than 40 kOe applied along the a -axis of Tb 5 Si 2.2 Ge 1.8 , and the c -axis of Gd. The absence of the temperature-induced SGV in Gd indicates the key role first-order phase transformations play in the appearance of the effect when temperature varies. The anisotropy of the magnetic field-induced SGV in Tb 5 Si 2.2 Ge 1.8 and the existence of the field-induced SGV in Gd, highlight the importance of the magnetocaloric effect in bringing about the SGV. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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