Time-dependent dielectric breakdown (TDDB) reliability analysis of CMOS analog and radio frequency (RF) circuits
| Autor: | Mustafa Berke Yelten, Mustafa Tarık Saniç |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Comparator 020208 electrical & electronic engineering Transistor Topology (electrical circuits) Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences Surfaces Coatings and Films law.invention CMOS Hardware and Architecture law 0103 physical sciences Signal Processing Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Operational amplifier Radio frequency Frequency mixer Electronic circuit |
| Zdroj: | Analog Integrated Circuits and Signal Processing. 97:39-47 |
| ISSN: | 1573-1979 0925-1030 |
| DOI: | 10.1007/s10470-018-1243-0 |
| Popis: | In this paper, a methodology to analyze the time dependent dielectric breakdown (TDDB) reliability of CMOS analog and radio frequency (RF) circuits has been proposed and applied to common circuit building blocks, including an operational amplifier, a RF mixer, and a comparator. The analysis includes both finding the transistors in the circuit topology that are the most sensitive to TDDB degradation, as well as, observing the trends of TDDB degradation over a series of nanoscale process technologies for each building block. Analysis outcomes suggest that the TDDB degradation resilience goes up for operational amplifiers and comparators whereas it decreases for RF mixers as the device channel lengths come down. The trends have been explained on the basis of the circuit block topology and device physics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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