Ag nanoparticle catalyst based on Ga2O3/GaAs semiconductor nanowire growth by VLS method
| Autor: | Khac An Dao, Tien Dai Nguyen, Eui-Tae Kim |
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| Rok vydání: | 2015 |
| Předmět: |
Aqueous solution
Materials science Vapor pressure business.industry Nanowire Nanoparticle Nanotechnology Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor Chemical engineering Wafer Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 26:8747-8752 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-015-3552-8 |
| Popis: | In this paper, we report the synthesis results of Ga2O3 semiconductor nanowires (NWs) on GaAs (100) semi-insulator substrate by vapor liquid solid (VLS) method. Our study based on Ag nanoparticle (AgNP) catalyst, in which prepared by conventional sol–gel method. As the GaAs wafer, after being deposited an AgNP layer in HF/AgNO3 aqueous solution, which dried and loaded to vacuum-chamber. GaAs slices heated in vacuum-furnace by VLS method with two temperature modes. The results showed that the Ga2O3 NW morphologies and properties depend strongly on technological conditions, such as AgNP catalyst concentration, growth temperature, and vapor pressure. It is also indicated that the NW random grown over large area with the diameter in the region conform from 18 to 30 nm scale and lengths ranging from several tens of nm to a few hundred micrometers. |
| Databáze: | OpenAIRE |
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