Maskless patterning of silicon surface based on scanning tunneling microscope tip‐induced anodization and chemical etching
| Autor: | Hiroyuki Sugimura, Masayuki Miyashita, Tetsuji Onuki, Nobuyuki Nakagiri, Yamamoto Takuma |
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| Rok vydání: | 1994 |
| Předmět: |
Potassium hydroxide
Materials science Nanostructure Physics and Astronomy (miscellaneous) Silicon Anodizing business.industry Analytical chemistry chemistry.chemical_element Isotropic etching law.invention chemistry.chemical_compound chemistry Etching (microfabrication) law Optoelectronics Scanning tunneling microscope Photolithography business |
| Zdroj: | Applied Physics Letters. 65:1569-1571 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | A microprocessing method for silicon (Si) without photolithography is proposed. The method consists of only two processes. Hydrogen‐terminated Si surfaces (Si‐H) were first locally anodized using scanning tunneling microscopy (STM). The non‐anodized surfaces were then etched chemically in potassium hydroxide solution. The anodic oxide produced with the first process performed as an etching mask. The height of the etched pattern of approximately 50 nm was much larger than the thickness of the anodic oxide. Humidity effect on STM tip‐induced anodization of Si‐H is also shown. The area of the anodization was enlarged with increasing humidity, and the spatial resolution became worse. |
| Databáze: | OpenAIRE |
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