Charge control performance of an ultra-low energy ion implanter

Autor:	R. Ranganathan, J.E. Sedgewick, D.E. Dyer, M.J. Rendon, W.A. Krull
Rok vydání:	2003
Předmět:	Engineering Ion implantation Low energy Beamline business.industry Charge control Electrical engineering Optoelectronics Electron Plasma business Secondary electrons
Zdroj:	1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
DOI:	10.1109/iit.1999.812166
Popis:	This paper describes an evaluation the charge control characteristics of an inline plasma cell installed at the end of the beamline on an Eaton NV-GSD/ULE2 (ULE) ultra-low energy ion implanter. The charge test vehicles used included Sematech Process-Induced Defect Effect Revealer-Manufacturing Equipment Monitor (SPIDER-MEM) devices and CHARM(R)-2 devices. Implants on these test vehicles were performed with varied plasma cell parameter settings. The results are compared with the performance of an Eaton NV-GSD200E (GSD) implanter with a secondary electron flood system (SEF) and another NV-GSD200E with a plasma flood system (PFS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b404bf7ee5cd25ba73f440c9b5e0512c https://doi.org/10.1109/iit.1999.812166 Zobrazit plný text záznamu