Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

Autor:	G. M. Haugen, Paul F. Baude, T. J. Miller, K. K. Law, Jamie Phillips, Michael A. Haase, P. K. Bhattacharya, K. Smekalin
Rok vydání:	1996
Předmět:	Deep-level transient spectroscopy Physics and Astronomy (miscellaneous) Chemistry Thermal emission Atomic physics Electronic band structure Conduction band Quantum well Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 68:3591-3593
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.116647
Popis:	Conduction‐band offsets in wide‐band‐gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 A thick Cd0.3Zn0.7S0.06Se0.94 single quantum wells with ZnS0.06Se0.94 barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the quaternary wells of 179±10 meV was measured. This corresponds to a conduction‐band offset energy of ∼251±20 meV.
Databáze:	OpenAIRE
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