| Autor: |
Ya A Aarik, Ya F Friedentkhal, P A Lyuk, A L Virro |
| Rok vydání: |
1987 |
| Předmět: |
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| Zdroj: |
Soviet Journal of Quantum Electronics. 17:1375-1378 |
| ISSN: |
0049-1748 |
| DOI: |
10.1070/qe1987v017n11abeh010836 |
| Popis: |
A study of optical amplification in AlGaAsSb/GaSb double-sided heterostructure lasers at temperatures 90–305K yielded the dependences of the gain on the rate of pumping of the active GaSb layer (p≈1018cm−3). The gain g depended linearly on the nominal pump current j in accordance with the law g = β(j–j0). At 300K the parameters β and j0 were 47 cmμkA−1 and 4.5 kAcm−2μ−1 respectively. The temperature dependences of β and j0 were determined. The experimental results were used to estimate the minimum threshold current density and the optimal thickness of the active layer in AlGaAsSb/GaSb double-sides heterostructure lasers. According to these estimates, the density of the threshold current could be reduced to 1 kA/cm2 for lasers with the active layer thickness not exceeding 0.1 μ and with optical losses below 30 cm−1. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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