Investigation of SET and RESET States Resistance in Ohmic Regime for Phase-Change Memory

Autor: Ilya V. Karpov, Semyon D. Savransky
Rok vydání: 2008
Předmět:
Zdroj: MRS Proceedings. 1072
ISSN: 1946-4274
0272-9172
Popis: New technique to separate bulk and interface electrical properties of polycrystalline and glassy Ge2Sb2Te5 (GST) in phase-change memory (PCM) devices is proposed. PCM with different GST thicknesses are measured. The average activation energies for bulk conductivity are 0.37 eV and 0.09 eV as well as bulk resistivities are about μOhm*cm2 and 20 μOhm*cm. The contact barriers is 0.07eV and specific contact resistance is about 0.3 μOhm*cm2 in studied PCM devices.It is discovered that bulk resistivities for both SET and RESET states in PCM obey Meyer-Neldel rule with almost identical isokinetic temperatures 335K − 340K. This information is discussed in terms of GST structure.
Databáze: OpenAIRE
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