Tailoring of optical band gap and electrical conductivity in a-axis oriented Ni doped Chromium Oxide thin films
| Autor: | Usman Ilyas, A. Latif, Saima Shaukat, I.M. Dildar, M. Khaleeq-ur-Rahman, Rasa Singh Rawat, Shahzad Naseem |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Band gap Annealing (metallurgy) Process Chemistry and Technology Doping Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Pulsed laser deposition symbols.namesake Electrical resistivity and conductivity 0103 physical sciences Materials Chemistry Ceramics and Composites symbols Electrical measurements Thin film 0210 nano-technology Raman spectroscopy |
| Zdroj: | Ceramics International. 44:11187-11195 |
| ISSN: | 0272-8842 |
| Popis: | Ni doped Cr 2 O 3 (NCO) films have attracted much attention due to their applications in the field of photovoltaics. This study reports the tailoring of structural, electrical and optical properties as a function of Ni doping in Chromium oxide (Cr 2 O 3 ). NCO thin films were grown by Pulsed laser deposition (PLD) using 2nd harmonic Nd:YAG Laser on n-Si (100) with in-situ annealing of 450 °C. Structural analyses based on X-ray diffractometry (XRD) and Raman Spectroscopy showed the inconsistent variation in crystallinity and shift in A 1 g band in turn revealing the successful incorporation of Ni into Chromium oxide host lattice. In addition, electrical measurements also showed an inconsistent variation in resistivity ranging from 10 2 to 10 4 Ω − cm . The properties showed widening of band gap energy (E g ) from 3.41 to 3.60 eV as a function of Ni doping concentration with significantly decreased reflectance in the range of 500–600 nm thereby increasing the absorption, a pre-requisite for solar absorbers. |
| Databáze: | OpenAIRE |
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