Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects

Autor:	C. J. Dorow, A. Penumatcha, A. Kitamura, C. Rogan, K. P. O'Brien, S. Lee, R. Ramamurthy, C. -Y. Cheng, K. Maxey, T. Zhong, T. Tronic, B. Holybee, J. Richards, A. Oni, C. -C. Lin, C. H. Naylor, N. Arefin, M. Metz, R. Bristol, S. B. Clendenning, U. Avci
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm45625.2022.10019524
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b3d864ba073ad72ef7e917329351fad6 https://doi.org/10.1109/iedm45625.2022.10019524 Zobrazit plný text záznamu