Modeling of CrSi/sub 2/-Si and MoSi/sub 2/-Si Schottky barrier contacts
| Autor: | Daniel Donoval, C. M. Snowden, J. Racko, V. Nagl, M. Barus |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Condensed matter physics Silicon Schottky barrier Binary compound chemistry.chemical_element Schottky diode Thermionic emission Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Electronic engineering Boundary value problem Electrical and Electronic Engineering Diffusion (business) Current density |
| Zdroj: | IEEE Transactions on Electron Devices. 42:1187-1189 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.387256 |
| Popis: | Forward and reverse l-V characteristics measured on CrSi/sub 2/-Si and MoSi/sub 2/Si Schottky structures were compared with simulated ones. While the CrSi/sub 2/-Si shows the typical non-ideal I-V characteristics of a reverse biased Schottky contact, the MoSi/sub 2/-Si exhibit the nearly ideal forward and reverse I-V characteristics. The model for numerical simulation involves the clearly defined boundary conditions which combines the thermionic-emission/diffusion theory with the generation recombination theory and has the closed form. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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