1.7–1.9 μm InxGa1−xAs/InyAl1−yAs light‐emitting diodes lattice‐mismatched grown on GaAs

Autor:	Gustaaf Borghs, M. R. Murti, B. Grietens, C. Van Hoof
Rok vydání:	1995
Předmět:	X-ray absorption spectroscopy Materials science Band gap business.industry Infrared General Physics and Astronomy Electroluminescence Spectral line law.invention law Optoelectronics Charge carrier business Light-emitting diode Diode
Zdroj:	Journal of Applied Physics. 78:578-580
ISSN:	1089-7550 0021-8979
Popis:	InxGa1−xAs/InyAl1−yAs based light‐emitting diodes emitting in the wavelength range 1.7–1.9 μm have been grown nonlattice matched on GaAs. Electroluminescence spectra are measured at 77 K and the injection level dependence has been studied. Mechanisms that broaden the lineshape are discussed. The position of the band gap and the electron temperature are derived by fitting the spectra. Band gap narrowing was observed as a function of the injected carrier density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b3c362b08aee2941cb21c0d39a1cb8f7 https://doi.org/10.1063/1.360574 Zobrazit plný text záznamu