Experimental study of the effect of the ion‐implanted dose on the resistance‐area product of Hg0.8Cd0.2Ten+pphotodiodes
| Autor: | J. M. Centeno, Jesús Sangrador, C. Gonzalez, Tomás Rodríguez |
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| Rok vydání: | 1990 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 68:6149-6152 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.346903 |
| Popis: | The temperature dependence of the differential resistance by area product at zero bias (R0 A) of boron‐implanted n‐on‐p infrared photodiodes made in x≊0.20 Hg1−xCdxTe has been measured and characterized as a function of the implanted dose assuming a simple model of the junction. The R0 A product and its functional dependence in the different temperature ranges are found to be dependent on the implanted dose in n+p as‐implanted abrupt junctions. The best performance diodes are found at the lowest implanted dose. The results indicate that there is an upper limit of the R0 A, in the range where the current is controlled by a minority‐carrier diffusion mechanism, that is determined in n+p junctions by the p‐side contribution. However, the indicated behavior of R0 A and its functional dependence at low temperatures supports the hypothesis defended by some workers in the literature indicating that the n‐side contribution to the current‐voltage characteristics may be important under some conditions, such as is t... |
| Databáze: | OpenAIRE |
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