Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes

Autor:	G. Zandler, W. Fischler, P. Buchberger, R. A. Höpfel
Rok vydání:	1996
Předmět:	Materials science Physics and Astronomy (miscellaneous) Terahertz radiation business.industry Band gap Physics::Optics Schottky diode Plasma oscillation Depletion region Femtosecond Optoelectronics Charge carrier business Plasmon
Zdroj:	Applied Physics Letters. 68:2778-2780
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.116604
Popis:	The transient reflectivity of GaAs Schottky diodes is measured by femtosecond time resolved pump‐probe experiments. The measured reflectivity for photon energies near the band gap reveals transient quasioscillatory behavior with frequencies up to 5.5 THz. The changes of the reflectivity are due to extremely fast changes of the carrier density within the depletion layer. We interpret the observed oscillatory signal as coherent plasma oscillations. Ensemble Monte Carlo simulations for the scenario agree well with the observed plasmon frequencies.
Databáze:	OpenAIRE
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