Photoluminescence energy shift with excitation intensity in GaAs/InGaP heterostructures at high pressure
| Autor: | James R. Sites, Dinesh Patel, Hafich Mj, Jianhui Chen, Ian L. Spain, G. Y. Robinson |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Photoluminescence Chemistry Heterojunction General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Laser law.invention Intensity (physics) Condensed Matter::Materials Science Nuclear magnetic resonance law Electric field Materials Chemistry Laser power scaling Atomic physics Inorganic compound Excitation |
| Zdroj: | Solid State Communications. 75:693-696 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/0038-1098(90)90228-4 |
| Popis: | A blue-shift of photoluminescence peak energy with laser excitation power is observed in the lattice-matched GaAs/InGaP heterostructure at pressures high enough that the InGaP bandgaps are indirect. The transition energy from the InGaP X-conduction band minima to GaAs Γ-valence maximum increases linearly at low laser power and saturates at higher power, after a shift of 55 meV. The transition energy from the GaAs X-conduction minima to Γ-valence maximum remains unchanged. The results are explained on the basis of the electric field induced by excess carriers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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