Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN
| Autor: | G. M. Ermolaeva, P. A. Karaseov, K. V. Karabeshkin, A. I. Titov, V. B. Shilov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Photoluminescence Materials science Polyatomic ion 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Condensed Matter::Materials Science Monatomic ion Ion implantation 0103 physical sciences Collision cascade Charge carrier Irradiation 0210 nano-technology Instrumentation Wurtzite crystal structure |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 458:164-168 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2018.11.049 |
| Popis: | Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade density (the cases of molecular and heavy atomic ion bombardment) enhances the stable damage accumulation rate and, accordingly, intensifies quenching of luminescence. The processes of PL suppression were theoretically considered as an increase of surface recombination rate of nonequilibrium photo-excited charge carriers due to production of stable damage at the irradiated subsurface layer. It is shown that carrier diffusion determines PL decay time shortening in the shallow implantation cases studied. |
| Databáze: | OpenAIRE |
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