A Low-Complexity Delta-Sigma Modulator ( $\Delta \Sigma $ ) for Low-Voltage, Low-Power Operation
| Autor: | Armando Gómez-Vieyra, Jesus E. Molinar-Solis, J. J. Ocampo-Hidalgo, Javier Alducin-Castillo, I. Vazquez-Alvarez, Alberto Garcia-Ortiz |
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| Rok vydání: | 2016 |
| Předmět: |
Engineering
business.industry Amplifier 020208 electrical & electronic engineering Spice Electrical engineering 02 engineering and technology Delta-sigma modulation CMOS Hardware_GENERAL Hardware and Architecture Integrator Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Inverter Electrical and Electronic Engineering business Low voltage Voltage |
| Zdroj: | Canadian Journal of Electrical and Computer Engineering. 39:190-199 |
| ISSN: | 0840-8688 |
| Popis: | In recent years, inverter-based sigma–delta ( $\Delta \Sigma $ ) modulators have received great attention as a suitable approach for the design of low-voltage, low-power, switched-capacitor $\Delta \Sigma $ . This method uses digital inverters as the active elements to construct the integrators in the $\Delta \Sigma $ loop. In some applications, a reduced silicon area implementation is an important constraint; this demands the use of only one inverter in the integrator. This paper proposes to use the common-source amplifier as the building block to achieve the operation of integration instead of the digital inverter. This leads to the operation of the amplifier in strong inversion combined with low-voltage supply and compact chip area. The idea was confirmed with a prototype fabricated in a 0.5- $\mu \text{m}$ CMOS technology available through Metal Oxide Semiconductor Implementation Service (MOSIS). Using 250 kHz of sampling frequency, measurement results show a signal-to-noise and distortion ratio of 70 dB over a bandwidth of 125 Hz. The circuit consumes 38 $\mu \text{W}$ when powered from a single 1.5-V supply voltage and uses $200\times 260~\mu \text{m}$ of active area. Circuit simulations in SPICE show the potential of this method to work with 450 mV of power supply in a 50-nm CMOS technology. |
| Databáze: | OpenAIRE |
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