3-D optical and electrical simulation for CMOS image sensors
| Autor: | Hideki Mutoh |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Engineering
Physics::Instrumentation and Detectors business.industry Thermal diffusivity Electronic Optical and Magnetic Materials Photodiode law.invention Crosstalk CMOS law Optoelectronics Rectangular potential barrier Ray tracing (graphics) Electrical and Electronic Engineering Image sensor business Saturation (magnetic) |
| Zdroj: | IEEE Transactions on Electron Devices. 50:19-25 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2002.806965 |
| Popis: | The optical and electrical characteristics of CMOS image sensors, such as readout, saturation, reset, charge-voltage conversion, and crosstalk characteristics, are analyzed by a three-dimensional (3-D) device simulator SPECTRA and a 3-D optical simulator TOCCATA which were developed for the analysis of CCD image sensors. The model of readout operation for a buried photodiode with potential barrier and dip is discussed with consideration of thermal diffusion. The transient simulation is executed for readout and reset operation. A novel calculation method for photodiode saturation condition is proposed. The optical and electronic crosstalk is analyzed individually by ray-tracing and current calculation. It is found that the above methods successfully analyze the optical and electrical characteristics of CMOS image sensors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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