| Autor: |
Wu Jie-Jun, Zhang Guo-Yi, Zhao Lu-Bing, Yang Zhi-Jian, Yu Tong-Jun |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
Chinese Physics B. 19:018101-4 |
| ISSN: |
1674-1056 |
| DOI: |
10.1088/1674-1056/19/1/018101 |
| Popis: |
Non-polar a-plane (110) GaN films have been grown on r-plane (102) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [100] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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