| Autor: |
Wang Yaohua, Jun Min Wu, Pan Yan, Gao Mingchao, Long He, Zhao Ge, Liu Jiang, Lili, Rui Jin |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE). |
| DOI: |
10.1109/eitce47263.2019.9094849 |
| Popis: |
A 3300V/62.5A low loss FS-IGBT was developed by using the carrier storage layer structure and laser annealing process on the back p+ collector, which could lower the saturation voltage. The effects of laser annealing energy and P+ collector dose on dynamic and static state were studied. Considering the trade-off of the turn-off loss and the saturation voltage, the IGBT was finally designed with the 2.35V saturation voltage, 132mJ turn-off loss. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
