Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing
| Autor: | Jiri Stuchlik, Igor G. Neizvestny, G. K. Krivyakin, A. V. Dvurechenskii, Vladimir A. Volodin, S. A. Kochubei, Alexander A. Shklyaev |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences law.invention Condensed Matter::Materials Science symbols.namesake law 0103 physical sciences Electrical and Electronic Engineering Instrumentation 010302 applied physics Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Laser chemistry Nanocrystal symbols 0210 nano-technology Raman spectroscopy Raman scattering |
| Zdroj: | Optoelectronics, Instrumentation and Data Processing. 52:496-500 |
| ISSN: | 1934-7944 8756-6990 |
| DOI: | 10.3103/s8756699016050113 |
| Popis: | The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that application of pulsed laser annealing allows one to vary the elemental composition and size of nanocrystals formed from solid alloys of germanium and silicon. |
| Databáze: | OpenAIRE |
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