| Autor: |
V. S. Dneprovskii, A. G. Boriskin, Alexander M. Smirnov |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.2270277 |
| Popis: |
The goal of the work is modeling and development of nondestructive method for the doped semiconductor layer diagnostics and measurement of the impurity levels depth relatively to the conduction band. To carry out diagnostics for materials with a high linear absorption there is required a method allows to measure material characteristics on the surface layer. To solve this problem was chosen reflected degenerate four-wave mixing technique. Nonlinear response increases dramatically in the case of the resonant excitation of electron-hole transition. Reflected degenerate four-wave mixing has been discovered in the case of one-photon resonant excitation of the excitons (electron – hole) transition for the atomic-like model structure (highly absorbing colloidal solution of CdSe/ZnS quantum dots (QDs)) by powerful beams of mode-locked laser with picosecond pulse duration. Formation of the beams in forward direction can be explained both self-diffraction of the input beams at the induced one-dimensional photonic crystal (induced diffraction grating) and by forward degenerate four-wave mixing. Backward direction beams formation can be explained only by reflected degenerate four-wave mixing. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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