Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

Autor:	Robert M. Wallace, Bruce E. Gnade, Sangchul Lee, Omokhodion David Iyore, Greg Mordi, Manuel Quevedo-Lopez, Saungeun Park, Young Gon Lee, Chang Goo Kang, Byoung Hun Lee, Jiyoung Kim, Srikar Jandhyala, Yonghun Kim
Rok vydání:	2014
Předmět:	chemistry.chemical_classification Electron mobility Materials science Fabrication Graphene Delamination General Chemistry Substrate (electronics) Polymer law.invention chemistry law General Materials Science Deformation (engineering) Composite material Shrinkage
Zdroj:	Carbon. 68:791-797
ISSN:	0008-6223
Popis:	The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ∼12980 and hole mobility ∼9214 cm2/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b35db0d566ff0481f39deee61e84251c https://doi.org/10.1016/j.carbon.2013.11.071 Zobrazit plný text záznamu Full Text from ScienceDirect