An Optimized Via Contact Scheme of FeRAM for Double-Level Metallization and Beyond

Autor:	Mi-Hyang Lee, N.J. Kang, Jinwoo Lee, Kinam Kim, Yoo-Sang Hwang, Yoon-Soo Chun, Sung-Yung Lee, Sang-eun Lee, Dong-won Shin, Bon-jae Koo, Soo-Ho Shin, Byung-Hee Kim, Dong-Jin Jung
Rok vydání:	1997
Předmět:	Scheme (programming language) Materials science Ferroelectric RAM Electronic engineering computer computer.programming_language
Zdroj:	Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.1997.b-1-3
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b3544243e377dddda2a26a5b81661726 https://doi.org/10.7567/ssdm.1997.b-1-3 Zobrazit plný text záznamu