Surface morphology of Ge-modified 3C-SiC/Si films
| Autor: | E. Moussaed, Jörg Pezoldt, Thomas Stauden, Michel Kazan, Richard Nader, Pierre Masri, M. Niebelschütz |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction Silicon Analytical chemistry chemistry.chemical_element Germanium Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Overlayer chemistry.chemical_compound Crystallography chemistry Electron diffraction X-ray crystallography Materials Chemistry Silicon carbide Surface roughness |
| Zdroj: | Surface and Interface Analysis. 40:1310-1317 |
| ISSN: | 1096-9918 0142-2421 |
| DOI: | 10.1002/sia.2895 |
| Popis: | The influence of Ge deposition prior to carbon interaction with 3° off-axis Si(111) substrates on the structural and morphological properties of the formed silicon carbide (SiC) layer is studied. In situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) revealed the formation of the cubic silicon carbide (3C-SiC) modification. In situ spectroscopic ellipsometry measurements revealed a decreasing 3C-SiC thickness with increasing Ge predeposition. Atomic force microscopy (AFM) studies revealed that the surface overlayer morphology is mainly formed by periodic step arrangements whose relevant geometric parameters, i.e. lateral separation, height and terrace width, depend on the Ge content. Besides the changes of the step morphology, the surface roughness and the grain size and the strain of the formed 3C-SiC decreases with increasing germanium precoverage. Copyright © 2008 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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