On carbon nitride synthesis at high-dose ion implantation

Autor:	Anatoly Borisov, O.V. Bespalova, V.G. Sukharev, N.G. Goryaga, V. S. Kulikauskas, E. A. Romanovsky, V. V. Zatekin
Rok vydání:	1998
Předmět:	Nuclear and High Energy Physics Materials science Ion beam Analytical chemistry Rutherford backscattering spectrometry Fluence Ion chemistry.chemical_compound Ion beam deposition Ion implantation chemistry Physics::Plasma Physics Irradiation Instrumentation Carbon nitride
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 139:355-358
ISSN:	0168-583X
DOI:	10.1016/s0168-583x(98)00057-3
Popis:	Rutherford backscattering spectrometry was used for the study of high dose 35 keV nitrogen ions implantation into graphites and glassy carbon. Quantitative data on depth profiles and its dependencies on irradiation fluence and ion beam density were obtained. The stationary dome-shaped depth profile with maximum nitrogen concentration 22–27 at.% and half-width more than twice exceeding projected range of ions is reached at fluence Φ ∼1018 cm−2. The dependence of the maximum concentration in the profile on ion current density was studied. The largest concentration was obtained at reduced ion current density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b34bb7ce08820bb13b5eb87921dd35d1 https://doi.org/10.1016/s0168-583x(98)00057-3 Zobrazit plný text záznamu Full Text from ScienceDirect