Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

Autor:	Dmitri S Arteev, Andrey F. Tsatsulnikov, Alexei V. Sakharov, W. V. Lundin, Evgenii V. Lutsenko, M. V. Rzheutski, E. E. Zavarin
Rok vydání:	2021
Předmět:	Materials science Condensed matter physics Ensemble forecasting Materials Chemistry State (functional analysis) Electrical and Electronic Engineering Dislocation Condensed Matter Physics Quantum well Electronic Optical and Magnetic Materials
Zdroj:	Semiconductor Science and Technology. 36:125007
ISSN:	1361-6641 0268-1242
Popis:	The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was investigated by temperature-dependent and time-resolved room-temperature photoluminescence measurements and analyzed via localized-state ensemble model. The results show that dislocations decrease non-radiative recombination time and do not affect either radiative recombination time or non-radiative recombination mechanism. Moreover, dislocation-related broadening, increasing linearly with increased dislocation density, was found to take place. However, a significant part of spectral width (∼55 meV) is not defined by either dislocation-induced or alloy- and thermally-induced broadening, revealing the existence of other broadening mechanisms (e.g. carrier–carrier scattering-induced broadening).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b34743e37e24b8cf882a0e77ee032662 https://doi.org/10.1088/1361-6641/abfbdb Zobrazit plný text záznamu