Sub-quarter micron phase shifting lithography using the desire process at 248 nm (deep UV)

Autor:	Ki-Ho Baik, Rik Jonckheere, L. Van den hove, Kurt G. Ronse, A.M. Goethals
Rok vydání:	1992
Předmět:	Optics Materials science business.industry Phase-shift mask Electrical and Electronic Engineering Condensed Matter Physics business Lithography Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Coherence (physics)
Zdroj:	Microelectronic Engineering. 17:69-73
ISSN:	0167-9317
Popis:	The lithographic performance of phase shifting and transmission masks are compared. This paper describes the ultimate resolution and process latitudes, that can be obtained by combining a phase shift mask with the DESIRE process at 248 nm. Special emphasis is put on the influence of coherence. Both simulation and experimental results are given.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b346a539619bbf7782f8023942c50d67 https://doi.org/10.1016/0167-9317(92)90015-j Zobrazit plný text záznamu