Low-Temperature Conformal Atomic Layer Etching of Si with a Damage-Free Surface for Next-Generation Atomic-Scale Electronics

Autor:	Chen-Hsuan Lu, Po-Hsien Cheng, Chin-I Wang, Yu-Tung Yin, Chen-Hsiang Ling, Miin-Jang Chen
Rok vydání:	2019
Předmět:	Atomic layer deposition Materials science business.industry Etching (microfabrication) Free surface Optoelectronics General Materials Science Conformal map Electronics business Layer (electronics) Atomic units Deposition (law)
Zdroj:	ACS Applied Nano Materials. 2:4578-4583
ISSN:	2574-0970
DOI:	10.1021/acsanm.9b00944
Popis:	Conformal atomic layer etching (cALE) of Si is realized on the basis of layer-by-layer self-limiting deposition and self-stop etching processes at low temperatures. In each cALE cycle, a conformal ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b3427e60d152d0e5d41947eaf1e92b85 https://doi.org/10.1021/acsanm.9b00944 Zobrazit plný text záznamu