Minority electron mobility and lifetime in thep+GaAs base of AlGaAs/GaAs heterojunction bipolar transistors

Autor:	M. I. Nathan, K. Beyzavi, F. Williamson, A. Ghiasi, Si Hoon Lee, Anand Gopinath, Doyoon Kim
Rok vydání:	1993
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) business.industry Doping Bipolar junction transistor Optoelectronics Heterojunction Epitaxy business Molecular beam Cutoff frequency Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 62:861-863
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.108547
Popis:	AlGaAs/GaAs heterojunction bipolar transistors with different base doping concentrations grown by gas source molecular beam epitaxy were fabricated and characterized at dc and high frequency. Three different base doping concentrations; 5×1018, 1×1019, and 5×1019 cm−3 doped with Be were used for the characterization with the same structural and process parameters, including 0.2 μm base width. Minority electron mobilities in heavily doped p type were measured as 1.1×103, 1.3×103, and 3×103 cm2 V/s for 5×1018, 1×1019, and 5×1019 cm−3, respectively, by using the current gain cutoff frequency (fT) which agrees well with theoretical predictions in heavily doped p‐type GaAs. Combining dc and high frequency measurements, electron lifetimes of 1.2×10−9, 5.5×10−10, and 2×10−11 s have been obtained for these three dopings, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b33bf90d079f8588805369f3f1dee412 https://doi.org/10.1063/1.108547 Zobrazit plný text záznamu