Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- $\kappa$ Intergate Dielectrics of Flash Memory Cells

Autor:	Laurent Breuil, Maria Toledano-Luque, Weidong Zhang, Geert Van den bosch, Zhigang Ji, Pieter Blomme, Robin Degraeve, Jan Van Houdt, Mohammed Zahid, Jian Fu Zhang, Baojun Tang
Rok vydání:	2014
Předmět:	business.industry Chemistry Electrical engineering Electron Dielectric Penning trap Instability Flash memory Electronic Optical and Magnetic Materials Planar Logic gate Optoelectronics Electrical and Electronic Engineering business Ultrashort pulse
Zdroj:	IEEE Transactions on Electron Devices. 61:1299-1306
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2014.2313041
Popis:	High density of electron trapping in high-κ intergate dielectric (IGD) materials remains a major concern for planar memory cells with either poly-Si or hybrid floating gates (FGs). In this paper, for the first time, using the ultrafast I-V measurements, it is demonstrated that a significant portion of the P/E windows are actually contributed by electrons trapped initially in the high-κ IGD stacks during program/erase, and then discharged to FG or control gate during verification. More importantly, it is demonstrated, for the first time, that this fast charge transition can be suppressed using novel multilayer high-κ IGD structures, and the fast window instability can be eliminated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b3328b751df12076b1edfd6ade4d5771 https://doi.org/10.1109/ted.2014.2313041 Zobrazit plný text záznamu