Absolute Value Determination of Vacancy Concentration in Silicon Crystals Using Low-Temperature Ultrasonic Measurements

Autor:	Hiroyuki Saito, Shotaro Baba, Yoshihiko Saito, Hiroshi Yamada-Kaneta, K. Mitsumoto, Terutaka Goto, Kazuhiko Kashima, Yuichi Nemoto, Mitsuhiro Akatsu, Kazuki Okabe
Rok vydání:	2014
Předmět:	Materials science Chemical substance Silicon Analytical chemistry chemistry.chemical_element Absolute value law.invention Magazine chemistry law Vacancy defect Ultrasonic sensor Arithmetic Science technology and society
Zdroj:	ECS Transactions. 64:13-18
ISSN:	1938-6737 1938-5862
DOI:	10.1149/06411.0013ecst
Popis:	For the samples taken from the void region of the CZ silicon crystal grown with the same solidification condition and different thermal histories after the solidification, we measure the magnitude S of the elastic softening which is proportional to the concentration of the single vacancies [V]. For these samples, we also measure the size distribution of the void density by using the infrared light-scattering tomography, to evaluate the concentration [Vc] of the vacancies consumed for the void formation. From these two experiments, we find a sum rule [Vc] + a S= C, where C depends only on the solidification condition and is independent of the thermal history after the solidification. This enables us to find the conservation rule of the vacancies [Vc] + [V] = C. The value of the proportionality constant a in the relation [V] = a S is determined. Demonstration of determining the absolute values of [V] from the measured S is given. An estimate is made for the value of the quadrupole-strain coupling constant.
Databáze:	OpenAIRE
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