Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV

Autor:	D. D. Sell, K. W. Wecht, H. C. Casey
Rok vydání:	1975
Předmět:	Range (particle radiation) Semiconductor Concentration dependence Impurity business.industry Chemistry Band gap Attenuation coefficient Doping Analytical chemistry General Physics and Astronomy business Reflectivity
Zdroj:	Journal of Applied Physics. 46:250-257
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.321330
Popis:	The absorption coefficient α for GaAs at room temperature was determined in the spectral range from 1.3 to 1.6 eV by transmission measurements for 10⩽α⩽103 cm−1 and by a Kramers−Kronig analysis of the reflectance for α≳103 cm−1. Measurements were made on high−purity n−type samples, n−type samples with free−electron concentrations from 5×1016 to 6.7×1018 cm−3, p−type samples with free−hole concentrations from 1.5×1016 to 1.6×1019 cm−3, and p−type samples heavily doped with the amphoteric impurity Si. These data show that near the direct energy gap Eg the shape of the α−vs−photon−energy curve is strongly dependent on the impurity concentration.
Databáze:	OpenAIRE
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