A flat gain/power responses 618 GHz power amplifier MMIC with high PAE by using transformer networks
| Autor: | Ching-Hsueh Chang, Shu-Jenn Yu, Chian-Sern Chang, Wei-Chou Hsu, Chang-Luen Wu, Ching-Sung Lee |
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| Rok vydání: | 2007 |
| Předmět: |
Power supply rejection ratio
Power-added efficiency Engineering business.industry Amplifier RF power amplifier Electrical engineering Power bandwidth Condensed Matter Physics Fully differential amplifier Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Linear amplifier Electrical and Electronic Engineering business Direct-coupled amplifier |
| Zdroj: | Microwave and Optical Technology Letters. 50:205-208 |
| ISSN: | 1098-2760 0895-2477 |
| Popis: | A two-stage power amplifier monolithic microwave integrated-circuit, operating between 6 and 18 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors is presented. This devised power amplifier has demonstrated flat gain and power responses over a wide bandwidth by employing a novel design approach of combined prematched LC network and multisection impedance transformer network. Superior gain flatness of ±1.5 dB and power flatness of ±1.1 dBm over 6–18 GHz bandwidth, respectively, have been successfully achieved. With a dual-bias configuration, the power amplifier shows average small-signal gain of 13 dB, 2-dB gain compression power of 32.4 dBm and high power-added efficiency (PAE) of 24–34.5%. In additions, by using off-chip combiner techniques, the balanced power amplifier shows superior maximum output power of 36.5 dBm and PAE of 22–33.1%. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 205–208, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23033 |
| Databáze: | OpenAIRE |
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