Fabrication and characterization of schottky gate poly(3-alkylthiophene) planar field-effect transistors
| Autor: | M. Willamder, Christer Svensson, Jonas Hellberg, A. Assadi |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Electron mobility
Fabrication Materials science business.industry Mechanical Engineering Transistor Metals and Alloys Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Planar Semiconductor Mechanics of Materials law MOSFET Materials Chemistry Optoelectronics Field-effect transistor MESFET business |
| Zdroj: | Synthetic Metals. 58:187-193 |
| ISSN: | 0379-6779 |
| Popis: | In this paper fabrication and characterization of Schottky gate planar field-effect transistors using poly(3-alkylthiophene) as an active semiconductor region are reported. This is the first time that planar MESFET transistors utilizing a polymer semiconductor have been fabricated and measured. Aluminum metal is used for the rectifying contact and two gold electrodes are constructed as source and drain. From the MESFET characteristic the channel carrier mobility is evaluated as 10 −5 cm 2 V −1 s −s , which is one order of magnitude larger than a MOSFET utilizing the same polymer. |
| Databáze: | OpenAIRE |
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