| Popis: |
Due to the material limitations, the traditional silicon-based power devices approach the intrinsic limits of the material in many ways. The silicon-based devices have not been applicable to high voltage, high frequency, high temperature, high efficiency and high power density applications. Due to the wide band gap semiconductor devices having unmatched electrical performance of the silicon-based devices, it can significantly reduce the weight of the inverter, volume, cost, and enhance efficiency and power density power electronic devices, which can withstand higher value, faster switching speeds, lower switching losses and higher operating junction temperature. The subject of high efficiency, high power density in the rail transit electrical drive demand as the background, the key technology research of high-power converter based on the wide band gap power semiconductor devices is proposed. First, the topological structure of power electronic traction transformer is given. Then, the system control strategies including cascaded H-bridge single-phase rectifier, dual active H-bridge converter control, inverter traction motor vector control, and auxiliary converter output voltage control are given. Related research will provide a solid foundation in the development of the wide band gap power devices and the high-voltage large-capacity device applications. |
