Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021)

Autor:	Heejeong Park, Jung-Dae Kwon, Hye Yeon Jang, Woojin Park, Seyoung Oh, Jae Hyeon Nam, Ojun Kwon, Yonghun Kim, Byung Jin Cho
Rok vydání:	2021
Předmět:	Biomaterials Materials science business.industry Heterosynaptic plasticity Electrochemistry Optoelectronics Condensed Matter Physics business Electronic Optical and Magnetic Materials Power (physics)
Zdroj:	Advanced Functional Materials. 31:2170294
ISSN:	1616-3028 1616-301X
DOI:	10.1002/adfm.202170294
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b2d81b8eee8e96244ff4695bbf9a7182 https://doi.org/10.1002/adfm.202170294 Zobrazit plný text záznamu Plný text