High-Temperature Sensitivity of a Depletion-Mode AlGaN/GaN MIS-HEMT
| Autor: | Yakov Roizin, Yossi Rosenwaks, Zoe Mutsafi, Klimentiy Shimanovich, Victor Kairys, R. Shima-Edelstein |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Silicon Subthreshold conduction business.industry Transistor Wide-bandgap semiconductor chemistry.chemical_element High-electron-mobility transistor Atmospheric temperature range Temperature measurement Electronic Optical and Magnetic Materials law.invention chemistry law Optoelectronics Sensitivity (control systems) Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 68:5695-5700 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2021.3109848 |
| Popis: | This article reports on the high-temperature (HT) operation (25 °C–400 °C) and temperature sensing mechanism of a depletion-mode AlGaN/GaN metal–insulator–semiconductor (MIS) high-electron-mobility transistor (depletion mode (D-mode) AlGaN/GaN MIS-HEMT) in GaN on Si technology. Our measurements and simulations show that the high sensitivity of the device is governed by traps at the GaN-cap/Si3N4 interface and in the GaN buffer layer. At subthreshold operation, the device temperature sensitivity reaches 8.73%/K at a drain-to-source current ( ${I}_{\mathrm{DS}}$ ) of 10 $\mu \text{A}$ /mm. This is similar to the values reported for silicon devices, but in a much wider temperature range and at much higher current densities. |
| Databáze: | OpenAIRE |
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