Possible applications of tantalum silicide for very-large-scale integration technology
| Autor: | Konrad Hieber, F. Neppl |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
Materials science
Diffusion barrier business.industry Metals and Alloys Tantalum chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Sputtering Chemical-mechanical planarization Silicide Materials Chemistry Optoelectronics Deposition (phase transition) Polycide business |
| Zdroj: | Thin Solid Films. 140:131-136 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(86)90167-7 |
| Popis: | The possibility of depositing TaSi 2 by sputtering and chemical vapour deposition (selective and non-selective deposition) opens a wide variety of applications for this material in very-large-scale integration technology. The following examples are briefly discussed: (1) polycide gate metallization; (2) silicide gate metallization; (3) diffusion barrier properties; (4) source-drain silicidation; (5) planarization by contact hole filling. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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