Evidence of residual edge dislocations in czochralski grown Si crystals in 〈110〉 direction

Autor:	M.R.L.N. Murthy, G. Rolland
Rok vydání:	1981
Předmět:	Edge type Crystallography Materials science Condensed matter physics Mechanics of Materials Mechanical Engineering Czochralski method Partial dislocations General Materials Science Edge (geometry) Dislocation Condensed Matter Physics Residual
Zdroj:	Materials Research Bulletin. 16:827-830
ISSN:	0025-5408
DOI:	10.1016/0025-5408(81)90156-2
Popis:	The published work on the type of residual dislocations in Si crystals grown in 〈110〉 direction by Czochralski method indicate that screw dislocations are difficult to be eliminated as they are known to run parallel to the axis of growth. Our work shows on the contrary that it is edge type dislocations which are rather difficult to be eliminated. Extensive X-ray topographic studies have been made to establish the type of dislocations and their movements. Also our work on the growth of dislocation-free Si crystals in 〈110〉direction and their mechanism of dislocation movements are briefly described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b2bfb8aa3442b70f6f681855b497ff6d https://doi.org/10.1016/0025-5408(81)90156-2 Zobrazit plný text záznamu