Basic principles of STT-MRAM cell operation in memory arrays

Autor:	R Chepulskii, William H. Butler, Alexey Vasilyevitch Khvalkovskiy, D. K. Lottis, Vladimir Nikitin, Dmytro Apalkov, X. Tang, Mohamad Towfik Krounbi, Robert Beach, Steven M. Watts, A. Driskill-Smith, Eugene Chen, P. B. Visscher, Adrian E. Ong
Rok vydání:	2013
Předmět:	Magnetoresistive random-access memory Hardware_MEMORYSTRUCTURES Acoustics and Ultrasonics Computer science Array performance Electronic engineering Condensed Matter Physics Chip Memory array Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Journal of Physics D: Applied Physics. 46:074001
ISSN:	1361-6463 0022-3727
DOI:	10.1088/0022-3727/46/7/074001
Popis:	For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b2b84d8ebad6952e3b0c5c77e6cbc7cc https://doi.org/10.1088/0022-3727/46/7/074001 Zobrazit plný text záznamu