Intersubband transitions in high indium content InGaAs/AlGaAs quantum wells
| Autor: | E. L. Martinet, James S. Harris, Martin M. Fejer, Hsiang-Chen Chui, Susan M. Lord |
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| Rok vydání: | 1993 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Solid-state physics Condensed matter physics Absorption spectroscopy Condensed Matter::Other Atomic electron transition Chemistry Nonlinear optics Second-harmonic generation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic band structure Band offset Quantum well |
| Zdroj: | Applied Physics Letters. 63:364-366 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.110044 |
| Popis: | We report the first observation of intersubband transitions in InyGa1−yAs(y=0.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain relaxation before growth of the quantum wells. Measured intersubband transition energies of 316 and 350 meV are among the largest ever reported. Asymmetric step In0.5Ga0.5As/AlGaAs quantum wells designed for second harmonic generation measurements also demonstrate strong intersubband absorption at 224 meV corresponding to the 1‐2 transition. With the large conduction band offsets (larger than 800 meV) available in this material system, extension to larger intersubband transitions energies for quantum well photodetector and nonlinear optics applications should be possible. |
| Databáze: | OpenAIRE |
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