Observation of radiation induced changes in stress and electrical properties in MOS devices

Autor:	K.P. MacWilliams, D.C. Shaw, C.E. Barnes, L. Lowry
Rok vydání:	1992
Předmět:	Nuclear and High Energy Physics Materials science Silicon business.industry chemistry.chemical_element Subthreshold slope Nuclear Energy and Engineering chemistry CMOS Stress relaxation Radiation damage Optoelectronics Irradiation Electrical and Electronic Engineering business Metal gate NMOS logic
Zdroj:	IEEE Transactions on Nuclear Science. 39:2146-2151
ISSN:	1558-1578 0018-9499
DOI:	10.1109/23.211415
Popis:	Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V/sub ot/ and V/sub it/ were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of triangle V/sub it/ and triangle V/sub ot/ taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986,1987); compressive stress at the silicon/SiO/sub 2/ interface does reduce radiation damage in the device. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b29ba118f126721b5b961f019c1a190c https://doi.org/10.1109/23.211415 Zobrazit plný text záznamu