Electrically reprogrammable ROM using N-channel memory transistors with floating gate
| Autor: | Toshio Wada |
|---|---|
| Rok vydání: | 1977 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Sense amplifier business.industry Computer science Transistor Electrical engineering Semiconductor memory engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Non-volatile memory Polycrystalline silicon law Hardware_INTEGRATEDCIRCUITS Materials Chemistry engineering Non-volatile random-access memory Electrical and Electronic Engineering Memory refresh business Computer memory Hardware_LOGICDESIGN |
| Zdroj: | Solid-State Electronics. 20:623-627 |
| ISSN: | 0038-1101 |
| Popis: | An electrically reprogrammable read-only-memory (REPROM) device, providing the fully decoded and on-board-writable functions, is described. The device consists of novel N -channel memory transistors with floating gate, non-volatile memory transistors, which enable electrically reprogramming operation. The memory transistor has been through more than 10 7 rewrite cycles with no gain facto (β) decrease. The memory device has been processed by the flat-MOS and the Si-gate technologies. It has a 2048 bit memory capacity, organized as 256 words of 8 bits. The polycrystalline silicon floating gate is covered with vapor-deposited silicon nitride. This allows selective write and erase operation, giving the memory device a new bit-level reprogrammable function. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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