Nano-scale patterning on sulfur terminated GaAs (0 0 1) surface by scanning tunneling microscope
| Autor: | Yuki Yagishita, Yusuke Toda, Masakazu Hirai, Hiroki Fujishiro |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Semiconductor materials Binding energy Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Sulfur Electrochemical scanning tunneling microscope Surfaces Coatings and Films law.invention chemistry law Optoelectronics Tunneling current Scanning tunneling microscope business Nanoscopic scale |
| Zdroj: | Applied Surface Science. 237:577-582 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2004.06.085 |
| Popis: | We perform nano-scale patterning on a sulfur (S) terminated GaAs (0 0 1) surface by a scanning tunneling microscope (STM) in ultra-high vacuum (UHV). A multi-layer of S deposited by using (NH4)2Sx solution is changed to a mono-layer after annealing at 560 °C for 15 h, which terminates the GaAs (0 0 1) surface. Groove structures with about 0.23 nm in depth and about 5 nm in width are patterned successfully on the S-terminated surface. We investigate dependences of both depth and width of the patterned groove on the tunneling current and the scanning speed of tip. It is observed that topmost S atoms are extracted together with first-layer Ga atoms, because of the larger binding energy of S Ga bond. |
| Databáze: | OpenAIRE |
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