Thermal Characteristics of 1.55-$\mu$m InGaAlAs Quantum Well Buried Heterostructure Lasers
| Autor: | Stephen J. Sweeney, Ian Francis Lealman, Xin Chen, Igor P. Marko, P. J. Cannard, Sayid A. Sayid, L. Rivers |
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| Rok vydání: | 2010 |
| Předmět: |
Quantum optics
Materials science Auger effect business.industry Slope efficiency Heterojunction Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics symbols.namesake symbols Optoelectronics Quantum efficiency Spontaneous emission Stimulated emission Electrical and Electronic Engineering business Quantum well |
| Zdroj: | IEEE Journal of Quantum Electronics. 46:700-705 |
| ISSN: | 1558-1713 0018-9197 |
| DOI: | 10.1109/jqe.2009.2039117 |
| Popis: | We have investigated the threshold current Ith and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of ith is due to nonradiative recombination, which accounts for up to ˜80% of Jth at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant nonradiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency ηi is ˜80% at 20°C remaining stable up to 80°C. In contrast, the internal optical loss, αi, increases from 15 cm-1 at 20°C to 22 cm-1 at 80°C, consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA. |
| Databáze: | OpenAIRE |
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