0.84-THz imaging pixel with a lock-in amplifier in CMOS
| Autor: | Zeshan Ahmad, Shinwoong Park, Rui Xu, K. O. Kenneth, Ja-Yol Lee, Dae Yeon Kim |
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| Rok vydání: | 2016 |
| Předmět: |
Physics
FET amplifier business.industry Amplifier 020208 electrical & electronic engineering 010401 analytical chemistry Lock-in amplifier Differential amplifier 02 engineering and technology 01 natural sciences 0104 chemical sciences law.invention CMOS law 0202 electrical engineering electronic engineering information engineering Operational amplifier Optoelectronics Instrumentation amplifier business Direct-coupled amplifier |
| Zdroj: | 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). |
| Popis: | An 840-GHz Schottky diode detector is integrated with an analog lock-in amplifier in 130-nm bulk CMOS. The integrated lock-in amplifier can support a modulation frequency of up to 10MHz with a gain of 54dB, a dynamic range of 42dB, and an input referred noise of less than 10 nV/√Hz at modulation frequencies higher than 100kHz. The integrated lock-in amplifier occupies an area of 0.17 mm2 and consumes 4.9mA from a 1.2-V supply. The detector and on-chip lock-in amplifier combination was used to form terahertz images. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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